Influence of γ radiation on thin Ta2O5-Si structures

Microelectronics Journal

Volumn 32, Issue 7, 2001, Pages 553-562

  Atanassova, E ^a   Paskaleva, A ^a   Konakova, R ^b   Spassov, D ^a   Mitin, V F ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

High k dielectrics; MOS structure; Radiation damage

Indexed keywords

DIELECTRIC MATERIALS; GAMMA RAYS; IRRADIATION; LEAKAGE CURRENTS; MICROELECTRONICS; PERMITTIVITY; TANTALUM COMPOUNDS; THERMOOXIDATION;

NON-ANNEALED FILMS;

MOS DEVICES;

EID: 0035400306     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00043-X     Document Type: Article

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