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Physica Status Solidi (B) Basic Research

Volumn 202, Issue 1, 1997, Pages 137-148

Physical vapor transport growth and properties of SiC monocrystals of 4H polytype

(5) Augustine, G a Hobgood, H Mcd a Balakrishna, V a Dunne, G a Hopkins, R H a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041105175 PISSN: 03701972 EISSN: None Source Type: Journal
DOI: 10.1002/1521-3951(199707)202:1<137::AID-PSSB137>3.0.CO;2-Y Document Type: Article

Times cited : (103)

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