Structural properties of GaN films grown by molecular beam epitaxy on vicinal SiC(0001)

Materials Research Society Symposium - Proceedings

Volumn 693, Issue , 2002, Pages 189-194

  Lee, C D ^a   Feenstra, R ^a   Shigiltchoff, O ^a   Devaty, R P ^a   Choyke, W J ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; ETCHING; FILM GROWTH; HYDROGEN; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA APPLICATIONS; SILICON CARBIDE; SUBSTRATES; X RAY ANALYSIS;

CHEVRON SHAPED STEPS; GALLIUM NITRIDE FLUX RATIO; HYDROGEN ETCHED SUBSTRATES DISPLAY STRAIGHT; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 0036377102     PISSN: 02729172     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)