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Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 15-20

Defect reduction in sublimation grown silicon carbide crystals by adjustment of thermal boundary conditions

(7) Schmitt, E a Rasp, M a Weber, A D a Kolbl M a Eckstein, R a Kadinski, L b Selder, M b

a SICRYSTAL AG (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH; ELECTRIC FIELDS; ELECTRIC RESISTANCE; FINITE VOLUME METHOD; HEAT TRANSFER; MAXWELL EQUATIONS; SUBLIMATION; TEMPERATURE DISTRIBUTION; THERMAL GRADIENTS;

CRYSTAL GROWTH SYSTEM; CRYSTAL QUALITY; THERMAL BOUNDARY CONDITIONS;

SILICON CARBIDE;

EID: 4244072959 PISSN: 02555476 EISSN: None Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.15 Document Type: Article

Times cited : (5)

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