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Volumn 572, Issue , 1999, Pages 259-264

Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging

Author keywords

[No Author keywords available]

Indexed keywords

DETECTORS; DIGITAL INSTRUMENTS; GRAPHITIZATION; HIGH TEMPERATURE OPERATIONS; IMAGING TECHNIQUES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SINGLE CRYSTALS; X RAYS;

EID: 0033357046     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-259     Document Type: Conference Paper
Times cited : (6)

References (9)
  • 1
    • 33847510976 scopus 로고
    • Investigation of growth processes of ingots of silicon carbide single crystals
    • Y.M. Tairov and V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals, J.Cryst.Growth 43, 209, 1978.
    • (1978) J.Cryst.Growth , vol.43 , pp. 209
    • Tairov, Y.M.1    Tsvetkov, V.F.2
  • 2
    • 0020112685 scopus 로고
    • Single crystal growth of SiC substrate material for blue light emitting diodes
    • G. Ziegler, P. Lanig, D. Theis and C. Weyerich, Single crystal growth of SiC substrate material for blue light emitting diodes, IEEE Trans. Electron. Devices 30, 277, 1983.
    • (1983) IEEE Trans. Electron. Devices , vol.30 , pp. 277
    • Ziegler, G.1    Lanig, P.2    Theis, D.3    Weyerich, C.4
  • 5
    • 0027146524 scopus 로고
    • X-ray imaging with photostimulable storage phosphors and future trends
    • A. Winnacker, x-ray imaging with photostimulable storage phosphors and future trends, Physica Medica IX 2-3, 95-101, 1993.
    • (1993) Physica Medica IX 2-3 , pp. 95-101
    • Winnacker, A.1
  • 7
    • 0010228387 scopus 로고
    • A procedure to visualize the melt-solid interface in Bridgeman grown germanium and lead tin telluride
    • P.G. Barber, R.K. Crouch, A.L. Fripp, W.J. Debnam, R.F. Berry and R. Simchick, A procedure to visualize the melt-solid interface in Bridgeman grown germanium and lead tin telluride, J.Cryst.Growth 74, 228-230, 1986.
    • (1986) J.Cryst.Growth , vol.74 , pp. 228-230
    • Barber, P.G.1    Crouch, R.K.2    Fripp, A.L.3    Debnam, W.J.4    Berry, R.F.5    Simchick, R.6
  • 8
    • 0025206378 scopus 로고
    • In-situ observation of impurity diffusion boundary layer in silicon Czrochalski growth
    • K. Kakimoto, M. Eguchi, H. Watanaba and T. Hibiya, In-situ observation of impurity diffusion boundary layer in silicon Czrochalski growth, J.Cryst.Growth 99, 665-669, 1990.
    • (1990) J.Cryst.Growth , vol.99 , pp. 665-669
    • Kakimoto, K.1    Eguchi, M.2    Watanaba, H.3    Hibiya, T.4
  • 9
    • 0028464069 scopus 로고
    • Visualization of liquid-solid interface morphologies in gallium subject to natural convection
    • T.A. Campbell and J.N. Koster, Visualization of liquid-solid interface morphologies in gallium subject to natural convection, J.Cryst.Growth 140, 414-425, 1994.
    • (1994) J.Cryst.Growth , vol.140 , pp. 414-425
    • Campbell, T.A.1    Koster, J.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.