Structural defects in ion implanted 4H-SiC epilayers

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

  Persson, P O A ^a   Skorupa, W ^a   Panknin, D ^a   Kuznetsov, A ^a   Hallen A ^a   Hultman, L ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTATIONAL METHODS; CRUCIBLES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HEAT SHIELDING; ION IMPLANTATION; IONS; PYROMETERS; RAPID THERMAL ANNEALING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; ELECTRIC ACTIVATION; GRAPHITE INSULATION; VERTICAL AIR-COOLED QUARTZ REACTOR;

SILICON CARBIDE;

EID: 0034870036     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J. Appl. Phys.