Germanium as a possible surfactant for growth of beta silicon carbide on silicon substrates

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 231-234

  Mitchell, S ^a   Spencer, M G ^a   Wongchotigul, K ^a  

^a HOWARD UNIVERSITY   (United States)

Author keywords

Chemical Vapor Deposition; Germanium; Surfactant

Indexed keywords

COMPOSITION EFFECTS; FILM GROWTH; MASKS; MICROMACHINING; MORPHOLOGY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS; SURFACE STRUCTURE; X RAY ANALYSIS;

FULL WIDTH AT HALF MAXIMUM (FWHM); X RAY ROCKING CURVE;

SILICON CARBIDE;

EID: 0031675059     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.231     Document Type: Article

References (6)

1. Tomoaki Hatayama, Norithiro Tanaka, Takashi Fuyui, and Hiroyuki Matsunami Journal of Electronic Materials vol. 26 1997, p 160
2. J.P. Li and A.J. Stecki, J Electrochemical Society vol. 142 p.624 1995
3. S. Nishino, J.A. Powell, and H.A. Will Appl Phys Lett. 42 p.460 1983
4. M. Copel, M.C. Reuter, M.Horn von Hoegen, and R. M. Tromp Phys. Rev 42 p. 11682 1990
5. Tsunenodu Kimoto, Hironori Nishino, Wook Sik Yoo, and Hiroyuki Matsunami J. Appl Phys. 73 p. 726 1993
6. P. Pirouz, f. Ernst, and T. T. Cheng Mat. Res. Soc. Symp. Proc vol 116 p. 57 1988