Surface roughness evolution of a-Si:H growth and its relation to the growth mechanism

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

  Smets, A H M ^a   Schram, D C ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; COMPUTER SIMULATION; DIFFUSION; ELLIPSOMETRY; FREE RADICALS; MATHEMATICAL MODELS; RELAXATION PROCESSES; SEMICONDUCTOR GROWTH; SILANES; SURFACE REACTIONS; THERMAL EFFECTS;

DANGLING BONDS (DB); GROWTH SITES;

AMORPHOUS SILICON;

EID: 0034431262     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-609-a7.6     Document Type: Conference Paper

References (19)