Time of flight mobility measurements in a-Si:H grown under controlled-energy ion-bombardment

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 300-303

  Ganguly, Gautam ^a   Sakata, Isao ^a   Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; GROWTH (MATERIALS); ION BOMBARDMENT; PHOTOCONDUCTIVITY;

CONTROLLED ENERGY ION BOMBARDMENT; ELECTRON DRIFT MOBILITY; HOLE DRIFT MOBILITY; HYDROGENATED AMORPHOUS SILICON; TIME OF FLIGHT PHOTOCONDUCTIVITY TECHNIQUE;

AMORPHOUS SILICON;

EID: 0030563511     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00691-5     Document Type: Article

References (11)

1. P.G. LeComber and W.E. Spear, Phys. Rev. Lett. 25 (1970) 509.
2. T. Tiedje, J.M. Cebulka, D.L. Morel and B. Abeles, Phys. Rev. Lett. 46 (1981) 1425.
3. J.M. Marshall, R.A. Street and M.J. Thompson, Philos. Mag. B54 (1986) 51.
4. J.M. Marshall, R.A. Street, M.J. Thompson and W.B. Jackson, Philos. Mag. B57 (1988) 387.
5. K. Murayama, H. Oheda, S. Yamasaki and A. Matsuda, Solid State Commun. 81 (1992) 887.
6. C.E. Nebel, R.A. Street, N.M. Johnson and J. Walker, Mater. Res. Soc. Symp. Proc. 297 (1993) 97.
7. J.P. Kleider, C. Longeaud and P. Roca i Cabarrocas, J. Non-Cryst. Solids 164-166 (1993) 403.
8. D. Das, H. Shirai, J. Hanna and I. Shimizu, Jpn. J. Appl. Phys. 30 (1991) L239.
9. M. Stutzmann, Philos. Mag. B60 (1989) 531.
10. H. Okushi, S. Yamasaki, H. Kawai, M. Hotta and K. Tanaka, Jpn. J. Appl. Phys. 21, Suppl. 2 (1982) 259.
11. G. Ganguly and A. Matsuda, Mater. Res. Soc. Symp. Proc. 258 (1992) 39.