Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 1, 1998, Pages 365-368

  Matsuda, Akihisa ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032326576     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581105     Document Type: Article

References (7)

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6. A. Matsuda, K. Yagii, T. Kaga, and K. Tanaka, Jpn. J. Appl. Phys., Part 1 23, 576 (1984).
7. A. H. Mahan, J. Carapella, B. P. Nelson, R. S. Crandall, and I. Balberg, J. Appl. Phys. 69, 6728 (1991).