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Volumn 149, Issue 7, 2002, Pages

Effects of plasma prenitridation and postdeposition annealing on the structural and dielectric characteristics of the Ta2O5/Si system

(3) Lai, Yi Sheng a Chen, Kuan Jen a Chen, Jen S a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; CRYSTALLIZATION; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PLASMA APPLICATIONS; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA PRENITRIDATION;

TANTALUM COMPOUNDS;

EID: 0036641928 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1481068 Document Type: Article

Times cited : (6)

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