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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2087-2093

Sub-1.3 nm amorphous tantalum pentoxide gate dielectrics for damascene metal gate transistors

(8) Inumiya, Seiji a Yagishita, Atsushi a Saito, Tomohiro a Hotta, Masaki a Ozawa, Yoshio a Suguro, Kyoichi a Tsunashima, Yoshitaka a Arikado, Tsunetoshi a

a TOSHIBA CORPORATION (Japan)

Author keywords

Amorphous; Chemical vapor deposition; Damascene gate; Equivalent oxide thickness; Gate dielectrics; Incubation time; Interface state density; Surface morphology; Tantalum pentoxide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MORPHOLOGY; MOSFET DEVICES; PERMITTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACES; TANTALUM COMPOUNDS; THIN FILMS;

DAMASCENE METAL GATE TRANSISTORS; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRICS; INCUBATION TIME; INTERFACE STATE DENSITY; TANTALUM PENTOXIDE;

AMORPHOUS MATERIALS;

EID: 0033689675 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2087 Document Type: Article

Times cited : (10)

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