Nitrogen (N2) implantation to suppress growth of interfacial oxide in MOCVD BST and sputtered BST films

Materials Research Society Symposium - Proceedings

Volumn 567, Issue , 1999, Pages 521-526

  Nieh, Renee ^a   Qi, Wen Jie ^a   Jeon, Yongjoo ^a   Lee, Byoung Hun ^a   Lucas, Aaron ^a   Kang, Laegu ^a   Lee, Jack C ^a   Gardner, Mark ^a   Gilmer, Mark ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITORS; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; FILM GROWTH; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; SILICA; SPUTTERING; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EQUIVALENT OXIDE THICKNESS; GROW GATE OXIDES; NITROGEN IMPLANTATION; RAPID THERMAL PROCESSING;

DIELECTRIC FILMS;

EID: 0033312550     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-567-521     Document Type: Conference Paper

References (5)

1. Y. Jeon, B.H. Lee, K. Zawadski, W. Qi, A. Lucas, R. Nieh, and J.C. Lee, IEDM Technical Digest, 797 (1998).
2. B. Doyle, H.R. Soleimani, and A. Philipossian, IEEE Electron Device Letters, 16, No.7, 301 (1995).
3. C.T. Liu, Y. Ma, S. Nakahara, D.J. Eaglesham, and S.J. Hillenius, IEEE Electron Device Letters, 18, No.3,105 (1997).
4. C.T. Liu, E.J. Lloyd, Y. Ma, M. Du, R.L. Opila, and S.J. Hillenius, IEDM Technical Digest, 499 (1996).
5. C. Lin, PhD thesis, The University of Texas at Austin, 1997.