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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4593-4598

Characterization of tantalum pentoxide dielectric films grown by low-pressure and plasma-enhanced chemical vapor deposition

(2) Lai, Y S a Jen Sue Chen, a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

LPCVD; Oxygen furnace annealing; Oxygen plasma annealing; PECVD; Ta2O5

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC PROPERTIES; FILM GROWTH; GAS FURNACES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES; TANTALUM COMPOUNDS;

OXYGEN PLASMA ANNEALING;

DIELECTRIC FILMS;

EID: 0035388539 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.4593 Document Type: Article

Times cited : (5)

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