Ultrathin and highly insulating amorphous-Ta2O5 films formed on Ru/TiN/Ti/n+-Si substrates

Applied Physics Letters

Volumn 74, Issue 6, 1999, Pages 824-826

  Moon, B K ^a   Aoyama, J ^a   Katori, K ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000388961     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123380     Document Type: Article

References (12)

1. G. Q. Lo, D. L. Kwong, P. C. Fazan, V. K. Mathews, and N. Sandler, IEEE Electron Device Lett. 14, 216 (1993).
2. B. K. Moon and H. Ishiwara, Appl. Phys. Lett. 67, 1996 (1995).
3. K. Eguchi and M. Kiyotoshi, Integr. Ferroelectr. 14, 33 (1997).
4. B. Yang, T. K. Song, S. Aggarwal, and R. Ramesh, Appl. Phys. Lett. 71, 3578 (1997).
5. C. Isobe and M. Saitoh, Appl. Phys. Lett. 56, 907 (1990).
6. B. K. Moon, C. Isobe, and J. Aoyama, J. Appl. Phys. (to be published).
7. S. Kamiyama, H. Suzuki, H. Watanabe, A. Sakai, H. Kimura, and J. Mizuki, J. Electrochem. Soc. 141, 1246 (1994).
8. T. Aoyama, S. Saida, Y. Okayama, M. Fujisaki, K. Imai, and T. Arikado, J. Electrochem. Soc. 143, 977 (1996).
9. R. Pretorius, J. M. Harris, and M. A. Nicolet, Solid-State Electron. 21, 667 (1978).
10. P. Y. Lesaicherre, S. Yamamichi, H. Yamaguchi, K. Takemura, H. Watanabe, K. Tokashiki, K. Satoh, T. Sakuma, M. Yoshida, S. Onishi, K. Nakajima, K. Shibahara, Y. Miyasaka, and H. Ono, International Electron Devices Meeting Technical Digest (IEEE, Washington, DC, 1994), p. 839.
11. K. Kishiro, N. Inoue, S. C. Chen, and M. Yoshimaru, Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Hamamatsu, Japan, 1997), p. 36.
12. R. C. Weast, M. J. Astle, and W. H. Beyer, CRC Handbook of Chemistry and Physics, 64th ed. (CRC, Boca Raton, FL, 1984), p. D-90.