High-frequency noise analysis of si/sige heterojunction bipolar transistors

International Journal of Electronics

Volumn 81, Issue 1, 1996, Pages 37-48

  Herzel, Frank ^a   Heinemann, Bernd ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; FREQUENCIES; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPURIOUS SIGNAL NOISE;

HIGH FREQUENCY NOISE ANALYSIS; NOISE AMPLIFICATION; TWO DIMENSIONAL SIMULATION CODE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030194191     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/002072196136913     Document Type: Article

References (15)

1. Cowern, N. E. B., Zalm, P. C., Vander Sluis, P., Gravesteijn, D. J., and De Boer, W. B., 1994, Diffusion in strained Si(Ge). Physical Review Letters, 72, 2585-2588.
2. De Graaff, H. C., Klaassen, F. M., 1990, Compact Transistor Modelling for Circuit Design (New York: Springer-Verlag), p. 84.
3. Gajewski, H., 1993, Analysis und Numerik von Ladungstransport in Halbleitern (Berlin: Institut fur Angewandte Analysis und Stochastik).
4. Gajewski, H., Zacharias, K., Langmach, H., Telschow, G., Und Uhle, M., 1986, TOSCA user's Guide (Berlin: Karl-WeierstraB-Institute for Mathematics).
5. Gaworzewski, P., Kruger, D., Kurps, R., Rucker, H., and Zeindl, H. P., 1994, Dopant electrical activity of Si and Si1-xGex multilayer structures doped with 5-like boron spikes at different temperatures. Journal of Applied Physics, 75, 7869-7874.
6. Guggenbuehl, W., and Strutt, M. J. O., 1957, Theory and experiments on shot noise semiconductor junction diodes and transistors. Proceedings of the IRE, 45, 839-854.
7. Hawkins, R. J., 1977, Limitations of Nielsen's and related noise equations applied to microwave bipolar transistors, and a new expression for the frequency and current dependent noise figure. Solid-state Electronics, 20, 191-196.
8. Heinemann, B., Herzel, F., and Zillmann, U., 1995, Influence of low doped emitter and collector regions on high-frequency performance of SiGe-base HBTs. Solid-state Electronics, 38, 1183-1189.
9. Herzel, F., and Heinemann, B., 1995, High-frequency noise of bipolar devices in consideration of carrier heating and low temperature effects. Solid-state Electronics, 38, 1905-1909.
10. Laux, S. E., 1985, Techniques for small-signal analysis of semiconductor devices. IEEE Transactions on Electron Devices, 32, 2028-2037.
11. Pejcinovic, B., Kay, L. E., Tang, T.-W., and Navon, D. H., 1989, Numerical simulation and comparison of Si BJTs and Si^ xGex HBTs. IEEE Transactions on Electron Devices, 36, 2129-2137.
12. Pellegrini, A., Colalongo, L., Gnudi, A., and Rudan, M., 1994, Performance analysis of SiGe-base BJTs. Proceedings of the 24th European Solid State Device Research Conference (ESSDERC'94), 12-15 September 1994, Edinburgh, U.K., Edition Frontieres 1994, pp. 485-488.
13. Schumacher, H., and Erben, U., 1993, Heterojunction bipolar transistors for noise-critical applications. Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII), Honolulu, Hawaii, U.S.A., 16-21 May 1993, pp. 345-352.
14. Schumacher, H., Erben, U., and Gruhle, A., 1992, Noise characterization of Si/SiGe heterojunction bipolar transistors at microwave frequencies. Electronics Letters, 28, 1167-1168.
15. Schumacher, H., Erben, U., and Gruhle, A., 1994, Low-noise performance of SiGe heterojunction bipolar transistors. IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, pp. 213-216.