Monte Carlo analysis of the noise behavior in Si bipolar junction transistors and SiGe heterojunction bipolar transistors at radio frequencies

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1582-1588

  Martin Martinez M J ^a   Perez S ^a   Pardo, D ^a   Gonzalez T ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035423524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1384850     Document Type: Article

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