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Microelectronics Reliability

Volumn 41, Issue 6, 2001, Pages 847-854

High injection effects on noise characteristics of Si BJTs and SiGe HBTs

(4) Martin Martinez M J a Perez S a Pardo, D a Gonzalez T a

a UNIVERSITY OF SALAMANCA (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; HOT CARRIERS; MONTE CARLO METHODS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

BIPOLAR JUNCTION TRANSISTORS (BJT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035367663 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/S0026-2714(01)00022-1 Document Type: Article

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.