Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

Physica B: Condensed Matter

Volumn 314, Issue 1-4, 2002, Pages 381-385

  Martin Martinez M J ^a   Perez S ^a   Pardo, D ^a   Gonzalez T ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

Ge profile shape; Heterojunction bipolar transistors; Hot carriers; Monte Carlo; Noise

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

MICROWAVE FREQUENCIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036504020     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01425-9     Document Type: Conference Paper

References (5)