Comparative study of electron transit times evaluated by DD, HD, and MC device simulation for a SiGe HBT

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2216-2220

  Jungemann, Christoph ^a,b   Neinhüs, Burkhard ^b   Meinerzhagen, Bernd ^a,b  

^a IEEE   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

Bipolar transistor; Cutoff frequency; Device simulation; Silicon

Indexed keywords

ELECTRON TRANSIT TIMES; GUMMEL PLOT; QUASI BALLISTIC TRANSPORT; SILICON GERMANIUM ALLOY;

ANISOTROPY; BAND STRUCTURE; CARRIER CONCENTRATION; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035471804     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954457     Document Type: Article

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