Hierarchical 2D RF noise simulation of Si and SiGe devices by Langevin-type DD and HD models based on MC generated noise parameters

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 481-484

  Jungemann, C ^a   Neinhus B ^a   Decker, S ^a   Meinerzhagen, B ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; CRYSTAL ORIENTATION; DIFFUSION; GREEN'S FUNCTION; HYDRODYNAMICS; MATHEMATICAL MODELS; MONTE CARLO METHODS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPURIOUS SIGNAL NOISE;

HYDRODYNAMIC MODELS; LANGEVIN TYPE DRIFT DIFFUSION MODEL; TWO DIMENSIONAL RF NOISE SIMULATION;

SEMICONDUCTOR DEVICES;

EID: 0035715684     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. High-mobility Si and Ge structures
2. SiGe-HBTs for mobile communication
3. An efficient approach to noise analysis through multidimensional physics-based models
4. An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs
5. Langevin forces and generalized transfer fields for noise modeling in deep submicron devices
6. Equations for the correlation functions using a generalized keldysh technique
7. Semiconductor noise in the framework of semiclassical transport
8. Hydrodynamic equations for semiconductors with nonparabolic band-structures
9. Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
10. Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times