Investigation of hole-tunneling current through ultrathin oxynitride/oxide stack gate dielectrics in p-MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1158-1164

  Yu, Hongyu ^a,b   Hou, Yong Tian ^a,b   Li, Ming Fu ^a,b   Kwong, Dim Lee ^a,c  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

Hole tunneling current; MOSFET; NO stack; Scaling limits; Silicon oxynitrides; Ultrathin gate dielectrics

Indexed keywords

GATE DIELECTRICS; HOLE BARRIER; HOLE TUNNELING CURRENT; OXYNITRIDE;

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRON TUNNELING; ENERGY GAP; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; REFRACTIVE INDEX; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0036638792     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013271     Document Type: Article

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