Enhanced hot-hole degradation in P+-poly PMOSFETs with oxynitride gate dielectrics

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1999, Pages 86-89

  Chen, Y Y ^a   Gardner, M ^a   Fulford, J ^a   Wristers, D ^a   Joshi, A B ^a   Chung, L ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOT CARRIERS; ION IMPLANTATION; NITROGEN; PHOSPHORUS; RAPID THERMAL ANNEALING; SILICA; STRESSES;

ENHANCED HOT HOLE DEGRADATION; HOT HOLE INJECTION; NITROGEN IMPLANTED SILICON SUBSTRATES; OXYNITRIDE GATE DIELECTRICS;

MOSFET DEVICES;

EID: 0032599256     PISSN: 1524766X     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)