Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximation

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1188-1193

  Hou, Y T ^a   Li, M F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

CMOSFETs; Inversion quantization; Quantum mechanical effects; Semiconductor device modeling; Threshold voltage

Indexed keywords

BAND STRUCTURE; ELECTRIC FIELD EFFECTS; NUMERICAL ANALYSIS; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EFFECTIVE MASS APPROXIMATION (EMA);

MOSFET DEVICES;

EID: 0035368032     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925246     Document Type: Article

References (21)

1. Self-consistent results for n-type Si inversion layer
2. Electronic properties of two-dimensional systems
3. Self-consistent calculation of electron and hole inversion charges at silicon-silicon dioxide interfaces
4. Influence of high substrate doping levels on the threshold voltage and mobility of deep-submicrometer MOSFETs
5. A simple model for quantization effects in heavily-doped silicon MOSFETs at inversion conditions
6. Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers
7. Quantum effects in Si n-MOS inversion layer at high substrate concentrations
8. Analysis of the MOS transistor based on self-consistent solutions to the Schrodinger and Poisson equations and on the local mobility model
9. Effective density-of-states to QM correction in MOS structures
10. Quantization effects in inversion layers of pMOSFETs on Si (100) substrate
11. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics
12. Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
13. Characterization and modeling of threshold voltage shift due to quantum mechanical effects in pMOSFET
14. A simple model for quantum mechanical effects in hole inversion layers in silicon pMOS devices
15. A physically-based model for quantization effects in hole inversion layers
16. A novel simulation algorithm for Si valence hole quantization of inversion layer in metal-oxied-semiconductor devices
17. Simplified method to calculate the band bending and the subband energies in MOS capacitors
18. x N strained quantum wells