Ultrathin Oxide-Nitride Gate Dielectric MOSFET's

IEEE Electron Device Letters

Volumn 19, Issue 4, 1998, Pages 106-108

  Parker, C G ^b   Lucovsky, G ^b,c   Hauser, J R ^a,b  

^a IEEE

^b Campus Box 7908   (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; GATES (TRANSISTOR); LEAKAGE CURRENTS; NITRIDES; OXIDES; PLASMA APPLICATIONS; ULTRATHIN FILMS;

OXIDE NITRIDE GATES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

MOSFET DEVICES;

EID: 0032046459     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.663529     Document Type: Article

References (10)

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