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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1720-1725

Defects at the interface of (100)Si with ultrathin layers of SiOx, Al2O3, and ZrO2 probed by electron spin resonance

(2) Stesmans, A a Afanas'ev, V V a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); PARAMAGNETIC RESONANCE;

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION METHOD; DIELECTRIC LAYERS; STACKS;

SEMICONDUCTING SILICON;

EID: 0036630355 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1491542 Document Type: Conference Paper

Times cited : (11)

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