Theory of SiGe waveguide avalanche detectors operating at lambda;=1.3 mu;m

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 791-796

  Herbert, D C ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE CURRENTS; CARRIER TRAPPING; LOW NOISE; RESPONSE SPEED;

WAVEGUIDES;

SILICON ALLOYS;

EID: 0000743459     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662777     Document Type: Article

References (20)

1. H. Temkin, T. P. Pearsall, J. C. Bean, R. A. Logan, and S. Luryi, "GeSi strained-layer superlattice waveguide photodetectors operating near 1.3 micron," Appl. Phys. Lett. vol. 48, pp. 963-965, 1986.
2. V. P. Kesan, P. G. May, E. Bassous, and S. S. Iyer, "Integrated wavelength photodetectors using Si/SiGe multiple quantum wells for long wavelength applications," in IEDM '90, 1990, pp. 637-640.
3. L. Naval, B. Jalali, L. Gomelsky, and J. M. Liu, "Optimization of SiGe/Si waveguide photodetectors operating at 1.3 micron," J. Lightwave Technol., vol. 14, pp. 787-797, 1996.
4. B. Jalali, A. F. J. Levi, F. Ross, and E. A. Fitzgerald, "SiGe waveguide photodetectors grown by rapid thermal chemical vapor deposition," Electron. Lett. vol. 28, pp. 269-271.
5. B. Jalali, L. Naval, and A. F. J. Levi, "Si-based receivers for optical data links," J. Lightwave Technol. vol. 12, pp. 930-935, 1994.
6. A. Splett, T. Zinke, K. Petermann, E. Kasper, H. Kibbel, H. J. Herzog, and H. Presting, "Integration of waveguides and photodetectors in SiGe for 1.3 micron operation," IEEE Photon. Technol. Lett. vol. 6, pp. 59-61, 1994.
7. M. Sugiyama, T. Morikawa, T. Tatsumi, T. Hashimoto, and T. Tashiro, "A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's," in IEDM, 1995, pp. 583-586.
8. T. Kagawa, Y. Kawamura, and H. Iwamura, "InGaAsP-InAlAs superlattice avalanche photodiodes," IEEE J. Quantum Electron. vol. 28, pp. 1419-1423, 1992.
9. D. C. Herbert, C. J. Williams, and M. Jaros, "Impact ionization and noise in SiGe multiquantum well structures," Electron. Lett. vol. 32, pp. 1616-1618, 1996.
10. D. C. Herbert, "A model for transient impact ionization," Compel II, pp. 413-418, 1992.
11. , "Impact ionization in Si bipolar devices," Electron. Lett. vol. 31, pp. 334-335, 1995.
12. , "Breakdown voltage in ultrathin pin diodes," Semicond. Sci. Technol. vol. 8, pp. 1993-1998, 1993.
13. S. A. Plimmer, J. P. R. David, D. C. Herbert, T. W. Lee, G. J. Rees, P. A. Houston, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, pp. 1066-1072, 1996.
14. S. Millidge, D. C. Herbert, M. Kane, G. W. Smith, and D. R. Wight, "Non-local aspects of breakdown in pin diodes," Semiconduct. Sci. Technol. vol. 10, pp. 344-347, 1995.
15. E. O. Kane, "Electron scattering by pair production in silicon," Phys. Rev., vol. 159, p. 624, 1967.
16. I. K. Czaijkowski, J. Allam, A. R. Adams, and M. A. Gell, "Impact ionization thresholds in GeSi alloys and strained layers," J. Appl Phys. vol. 71, pp. 3821-3826, 1992.
17. D. C. Herbert, "Ionization in GaAs multilayers," Semiconduct. Sci. Technol. vol. 10, pp. 405-411, 1995.
18. , "Band structure engineering of hot carrier transport in SiGe heterojunction bipolar transistors," Semiconduct. Sci. Techol. vol. 7, pp. 44-50, 1992.
19. C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region GaAs avalanche photodiodes," Appl. Phys. Lett. vol. 69, pp. 3734-3736, 1996.
20. D. C. Herbert, "Avalanche noise in submicron pin diodes," Electron. Lett. vol. 33, pp. 1257-1258, 1997.