Analytical approximation for the excess noise factor of avalanche photodiodes with dead space

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 344-347

  Hayat, Majeed M ^a   Chen, Zikuan ^b   Karim, Mohammad A ^b  

^a University of Dayton   (United States)

^b University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; IONIZATION; NUMERICAL METHODS; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; CONSTANT IONIZATION COEFFICIENT; DEAD SPACE EFFECT; EXCESS NOISE FACTOR; MEAN GAIN; RANDOM MULTIPLICATION GAIN; RECURRENCE EQUATIONS;

PHOTODIODES;

EID: 0033164965     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772371     Document Type: Article

References (13)

1. C. Hu, K. A. Anselm, B. G. Streetman, and J. C. Campbell, "Noise characteristics of thin multiplication region avalanche photodiodes," Appl. Phys. Lett., vol. 69, no. 24, pp. 3734-3736, 1996.
2. K. A. Anselm, P. Yuan, C. Hu, C. Lenox, H. Nie, G. Kinsey, J. C. Campbell, and B. G. Streetman, "Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions," Appl. Phys. Lett., vol. 71, pp. 3883-3885, 1997.
3. V. Chandramouli, C. M. Maziar, and J. C. Campbell, "Design considerations for high-performance avalanche photodiode multiplication layers," IEEE Trans. Electron Devices, vol. 41, pp. 648-654, May 1994.
4. K. F. Li, D. S. Ong, J. P. R. David, P. N. Robson, R. C. Tozer, G. J. Reez, and R. Grey, "Low excess noise characteristics in thin avalanche region GaAs diodes," Electron Lett., vol. 34, pp. 125-126, 1998.
5. + GaAs avalanche photodiodes." IEEE Trans. Electron Devices, vol. 45, pp. 1804-1809, Aug. 1998.
6. + GaAs diodes," Appl. Phys. Lett., vol. 72, pp. 232-234, 1998.
7. R. J. McIntyre "Multiplication noise in avalanche photodiodes," IEEE Trans. Electron Devices, vol. ED-13, pp. 164-168, Jan. 1966.
8. J. N. Hollenhorst, "A theory of multiplication noise," IEEE Trans. Electron Devices, vol. 37, pp. 781-788, Mar. 1990.
9. Y. Okuto and C. R. Crowell, "Ionization coefficients in semiconductors: A nonlocalized property," Phys. Rev., vol. B10, pp. 4284-4296, 1973.
10. M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Effect of dead space on gain and noise of double-carrier multiplication avalanche photodiodes," IEEE Trans. Electron Devices, vol. 39, pp. 546-552, 1992.
11. M. M. Hayat, W. L. Sargeant, and B. E. A. Saleh, "Effect of dead space on gain and noise in Si and GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 5, pp. 1360-1365, 1992.
12. J. S. Marsland, R. C. Woods, and C. A. Brownhill, "Lucky drift estimation of excess noise factor for conventional avalanche photodiodes including dead space effect," IEEE Trans. Electron Devices, vol. 39, pp. 1129-1135, 1992.
13. A. Spinelli and A. L. Lacaita, "Mean gain of avalanche photodiodes in a dead space model," IEEE Trans. Electron Devices, vol. 43, pp. 23-31, Jan. 1996.