Frequency response of avalanche photodetectors with separate absorption and multiplication layers

Journal of Lightwave Technology

Volumn 14, Issue 12, 1996, Pages 2778-2785

  Wu, Weishu ^a   Hawkins, Aaron R ^a   Bowers, John E ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC FIELDS; FREQUENCY RESPONSE; LIGHT ABSORPTION; LIGHTING; MATHEMATICAL MODELS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES;

AVALANCHE PHOTODETECTORS; SILICON HETEROINTERFACE PHOTODETECTORS;

PHOTODETECTORS;

EID: 0030394051     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.545797     Document Type: Article

References (26)

1. B. L. Kasper and J. C. Campbell, "Multigigabit-per-second avalanche photodiode lightwave receivers," J. Lightwave Technol., vol. LT-5, pp. 1351-1364, 1987.
2. J. C. Campbell, "Heterojunction photodetectors for optical communications," Heterostructures and Quantum Devices. New York: Academic, 1994, pp. 243-271.
3. S. Fujita, N. Henmi, I. Takano, M. Yamaguchi, T. Torikai, T. Suzaki, S. Takano, H. Ishihara, and M. Shikada, "A 10 Gbit/s 80 km optical fiber transmission experiment using a directly modulated DFB-LD and a high speed InGaAs APD," in Tech. Dig. OFC'88, New Orleans, LA, postdeadline paper, 1988.
4. R. G. Smith and S. R. Forrest, "Sensitivity of avalanche photodetector receivers for long-wavelength optical communications," Bell Syst. Tech. J., vol. 61, pp. 2929-2946, 1982.
5. A. R. Hawkins, T. E. Reynolds, D. R. England, D. I. Babic, M. J. Mondry, K. Streubel, and J. E. Bowers, "Silicon hetero-interface photodetector," Appl. Phys. Lett., vol. 68, pp. 3692-3694, 1996.
6. 0.53As," Appl. Phys. Lett., vol. 36, pp. 218-220, 1980.
7. L. W. Cook, G. E. Bulman, and G. E. Stillman, "Electron and hole impact ionization coefficients in GaAs," Solid-State Electron., vol. 21, pp. 331-340, 1978.
8. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Dev., vol. ED-13, pp. 164-168, 1966.
9. T. Kaneda, "Silicon and germanium avalanche photodiodes," Semiconductors and Semimetals. New York: Academic, vol. 22, 1985, pp. 263-289.
10. K. Berchtold, O. Krumppholz, and J. Suri, "Avalanche photodetectors with a gain-bandwidth product of more than 200 GHz," Appl. Phys. Lett., vol. 26, pp. 585-587, 1975.
11. J. C. Campbell, W. S. Holden, G. J. Qua, and A. G. Dentai, "Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions," IEEE J. Quantum Electron., vol. QE-21, pp. 1743-1746, 1985.
12. J. C. Campbell, B. C. Johnson, G. J. Qua, and W. T. Tsang, "Frequency response of InP/InGaAsP/InGaAs avalanche photodetectors," J. Lightwave Technol., vol. 7, pp. 778-784, 1989.
13. 0.47As/InP avalanche photodetectors," Appl. Phys. Lett., vol. 41, pp. 95-98, 1982.
14. R. J. McIntyre, "Factors affecting the ultimate capabilities of high speed avalanche photodetectors and a review of the state-of-the-art," in Int. Electron Devices Meet. Tech. Dig., 1973, pp. 213-216.
15. R. B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys., vol. 38, pp. 3705-3714, 1967.
16. J. N. Hollenhorst, "Frequency response theory for multilayer photodiodes," J. Lightwave Technol., vol. 8, pp. 531-537, 1990.
17. G. Kahraman, B. E. A. Saleh, W. L. Sargeant, and M. C. Teich, "Time and frequency response of avalanche photodiodes with arbitrary structure," IEEE Trans. Electron Devices, vol. 39, pp. 553-560, 1992.
18. W. N. Grant, "Electron and hole ionization rates in epitaxial silicon at high electric fields," Solid-State Electron., vol. 16, pp. 1189-1203, 1973.
19. J. C. Campbell, S. Chandrasekhar, W. T. Tsang, G. J. Qua, and B. C. Johnson, "Multiplication noise of wide-bandgap InP/InGaAsP/InGaAs avalanche photodiodes," J. Lightwave Technol., vol. 7, pp. 473-477, 1989.
20. R. Kuvas and C. A. Lee, "Quasistatic approximation for semiconductor avalanches," J. Appl. Phys., vol. 41, pp. 1743-1755, 1970.
21. I. M. Naqvi, "Effects of time dependence of multiplication process on avalanche noise," Solid-State Electron., vol. 16, pp. 19-28, 1973.
22. H. W. Ruegg, "An optimized avalanche photodiode," IEEE Trans. Electron Dev., vol. ED-14, pp. 239-251, 1967.
23. C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleimack, and W. Wiegmann, "Ionization rates of hole and electrons in silicon," Phys. Rev., vol. 134, pp. A761-A773, 1964.
24. P. P. Webb, "Measurements of ionization coefficients in silicon at low electric fields," presented at Electro-Optics Operations, GE Canada Inc.
25. T. Kaneda, H. Matsumoto, and T. Yamaoka, "A model for reach-through avalanche photodiodes (RAPD's)," J. Appl. Phys., vol. 47, pp. 3135-3139, 1976.
26. R. J. McIntyre, "Recent developments in silicon avalanche photodiodes," Measurement, vol. 3, pp. 146-152, 1985.