Gain-bandwidth product analysis of InAlGaAs-InAlAs superlattice avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 8, Issue 2, 1996, Pages 269-271

  Watanabe, I ^a   Tsuji, M ^a   Makita, K ^a   Taguchi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BANDWIDTH; CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON ENERGY LEVELS; IONIZATION OF SOLIDS; NUMERICAL METHODS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES;

BUFFER LAYER; CURRENT CONTINUITY EQUATIONS; GAIN BANDWIDTH PRODUCT ANALYSIS; IONIZATION RATE; SEPARATE ABSORPTION AND MULTIPLICATION STRUCTURE;

PHOTODIODES;

EID: 0030085688     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.484263     Document Type: Article

References (14)

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