Quantification of scanning capacitance microscopy measurements for 2D dopant profiling

Microelectronics Reliability

Volumn 40, Issue 8-10, 2000, Pages 1395-1399

  Malberti, P ^a   Ciampolini, L ^a   Ciappa, M ^a   Fichtner, W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8444241249     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00163-3     Document Type: Article

References (6)

1. H. De Wolf, R. Stephenson J. Trenkler, T. Clarysse, T. Hantschel, W. Vandervorst Status and review of 2D carrier profiling using SCM J Vac Sci Techn B18(2000)361-368
2. H. Edwards, R. McGlothlin, R. San Martin, Elisa U, M. Gribelyuk, R. Mahaffy, C.K. Shih, R.S. List, V. Ukraintsev SC spectroscopy: an analytical technique for PN junction delineation in Si devices Appl Phys Lett 72(1998)698-700
3. J. Kopanski, J. Marchiando, D. Berning, R. Alvis, H. Smith. SCM measurement of two-dimensional dopant profiles across junctions J Vac Sci Techn B16(1998)339-343
4. A. Erickson, M. Adderton, E. Strausser,. SCM for carrier profiling in semiconductors Solid State Technology (1997)125-133
5. V Raineri, S Lombardo Effective channel length and base width measurements by SCM J Vac Sci Techn B18(2000)545-548
6. J. Kopanski, J. Marchiando, J. Albers, B. Rennex Carrier concentration dependence of SCM signal in the vicinity of p-n junctions J Vac Sci Techn B18(2000)409-413