Doping landscapes in the nanometer range by scanning capacitance microscopy

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 525-529

  Anand, S ^a   Carlstrom C F ^a   Rodrigeuz Messmer, E ^a   Lourdudoss, S ^a   Landgren, G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Corrugated p n junction; Doping; Lateral resolution; Scanning capacitance microscopy

Indexed keywords

SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

LATERAL RESOLUTION; SCANNING CAPACITANCE MICROSCOPY;

SCANNING ELECTRON MICROSCOPY;

EID: 0032663604     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00859-9     Document Type: Article

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