Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon

Crystal Research and Technology

Volumn 37, Issue 9, 2002, Pages 983-1010

  Talanin, V I ^a   Talanin, I E ^a   Levinson, D I ^a  

^a ZAPORIZHZHIA NATIONAL UNIVERSITY   (Ukraine)

Author keywords

Microdefects; Point defects; Self interstitials; Silicon; Vacancies

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ETCHING; NUCLEATION; POINT DEFECTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

MICRODEFECTS; SELF-INTERSTITIALS;

SINGLE CRYSTALS;

EID: 0036386876     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200209)37:9<983::AID-CRAT983>3.0.CO;2-N     Document Type: Article

References (120)

1. A.J.R. De Kock: Phil. Res. Rep. (1973) 1.
2. N.V. Veselovskaya, E.G. Sheikhet, K.N. Neimark and E.S. Falkevich: in Rost i legirovanie poluprovodnikovykh kristallov i plenok, vol. 2 (Nauka, Novosibirsk, 1977) p. 284.
3. H. Nishikawa, T. Tanaka, Y. Yanase et al.: Jpn. J. Appl. Phys. 36 (1997) 6595.
4. H.C. Gatos: in Defect Control in Semicond., vol. 1 (Elsevier, Amsterdam, 1990) p. 3.
5. T. Abe: JAERI-M 92 (1993) 7.
6. T. S. Plaskett: Trans. Met. Soc. AIME 233 (1965) 809.
7. T. Abe, T. Samizo and S. Maruyama: Jpn. J. Appl. Phys. 5 (1966) 255.
8. H. Hattori and N. Kato: J. Phys. Soc. Jpn. 21 (1966) 1773.
9. J. Chikawa, Y. Asada and I. Fujimoto: J. Appl. Phys. 41 (1970) 1922.
10. A. J. R. De Kock: Appl. Phys. Lett. 16 (1970) 100.
11. A. J. R. De Kock: J. Electrochem. Soc. 118 (1971) 1851.
12. H. Föll and B.O. Kolbesen: J. Appl. Phys. 8 (1975) 319.
13. K. Tempelhoff and N. Van Sung: Phys. Stat. Sol. (a) 70 (1982) 441.
14. A.A. Sitnikova, L.M. Sorokin, I.E. Talanin et al.: Phys. Stat. Sol. (a) 81 (1984) 433.
15. T. Abe, H. Harada and J. Chikawa: Physica 116 B/C (1983) 139.
16. P. M. Petroff and A. J. R. De Kock: J. Cryst. Growth 30 (1975) 117.
17. P.J. Roksnoer and H.M.B. Van Den Boom: J. Cryst. Growth 53 (1981) 563.
18. A.A. Sitnikova, L.M. Sorokin, I.E. Talanin et al.: Phys. Stat. Sol. (a) 90 (1985) K31.
19. A.A. Sitnikova, L.M. Sorokin, I.E. Talanin et al.: Fizika Tverdogo Tela 28 (1986) 1829.
20. A.A. Sitnikova, L.M. Sorokin and E.G. Sheikhet: Fizika Tverdogo Tela 29 (1987) 2623.
21. V.T. Bublik and N.M. Zotov: Cryst. Rep. 42 (1997) 1033.
22. S. Iida, Y. Aoki, Y. Sugita et al.: Jpn. J. Appl. Phys. 37 (1998) 241.
23. Y. K. Kim, S. Ha Tae and J. K. Yoon: J. Mater. Sci. 33 (1998) 4627.
24. N. Nango, S. Iida, and T. Ogawa: J. Appl. Phys. 38 (1999) 5695.
25. V.I. Talanin: in Siberian Russ. Workshops on Electron Devices and Materials (EDM'2000). Proc., (NSTU, Novosibirsk, 2000) p. 87.
26. S. Iida, Y. Aoki, K. Okitsu et al.: Jpn. J. Appl. Phys. 39 (2000) 6130.
27. V.I. Talanin, I.E. Talanin and D.I. Levinson: in Proc. of ICSC-01 (Obninsk, 2001) p. 202.
28. H. Föll, U. Gösele and B.O. Kolbesen: J. Cryst. Growth 40 (1977) 90.
29. T.Y. Tan and U. Gösele: Appl. Phys. A 37 (1985) 1.
30. J. Chikawa and S. Shirai: J. Cryst. Growth 39 (1977) 328.
31. J.A. Van Vechten: Phys. Rev. B 17 (1978) 3197.
32. P.J. Roksnoer: J. Cryst. Growth 58 (1984) 596.
33. S. M. Hu: J. Vac. Sci. and Technol. 14 (1977) 17.
34. E. Sirtl: in Semiconductor Silicon 1977 (Electronchem. Soc., Pennington, N.Y., 1977) p. 4.
35. A.J.R. De Kock: in Defect in Semicond. (North-Holland Publ. Co., Amsterdam, 1981) 309.
36. V.V. Voronkov: J. Cryst. Growth 59 (1982) 625.
37. V.V. Voronkov and M.G. Milvidskii: Kristallografiya, 33 (1988) 471.
38. V.V. Voronkov and R. Falster: J. Cryst. Growth 194 (1998) 76.
39. E. Dornberger, W. Von Ammon, J. Virbulis et al.: J. Cryst. Growth 230 (2001) 291.
40. T.L. Larsen, L. Jensen, A. Lüdge et al.: J. Cryst. Growth 230 (2001) 300.
41. H. Rauh, D. Sieger and A. Wright: in Defect Control in Semiconductor, vol. 2 (Elsevier, Amsterdam, 1990) p. 1541.
42. E. Sirtl and A. Adler: Z. Metalkunde 52 (1961) 529.
43. F. Secco d'Arogona: J. Electrochem. Soc. 119 (1972) 948.
44. M.F. Ashby and L.M. Brown: Phil. Mag. 8 (1963) 1083.
45. M.F. Ashby and L.M. Brown: Phil. Mag. 8 (1963) 1649.
46. M. Rühle. Phys. Stat. Sol. 19 (1967) 279.
47. J.B. Mitchell and W.L. Bell: Acta Met 24 (1976) 147.
48. W.L. Bell: J. Appl. Phys. 47 (1976) 1676.
49. H. Föll and M. Wilkens: Phys. Stat. Sol. (a). 31 (1975) 519.
50. K. Seigo, K. Masazu, Y. Naotsugu et al.. J. Appl. Phys. 50 (1979) 8240.
51. S. Kishino, Y. Matsuhita, M. Kanamori and T. Iizuka: Jpn. J. Appl. Phys. 21 (1982) 1.
52. I.E. Talanin, V.I. Talanin and D.I. Levinson: Materialy electronnoi techniki 4 (2000) 21.
53. V.I. Talanin, I.E. Talanin and D.I. Levinson: Semic. Sci. and Technol. 17 (2002) 104.
54. P.B. Hirsh, A. Howie, R.B. Nicholson, et al.: Electron microscopy of thin crystals (Butterworths, London, 1965).
55. A. Bourret, J. Thibault-Desseaux and D.N. Seidman: J. Appl. Phys. 55 (1984) 825.
56. M. Rühle, M. Wilkens and N. Essmann: Phys. Stat. Sol. 11 (1965) 819.
57. M. Rühle: Phys. Stat. Sol. 19 (1967) 263.
58. M. Wilkens and H. Föll: Phys. Stat. Sol. (a) 49 (1978) 555.
59. K.H. Katerbau: Phys. Stat. Sol. (a) 38 (1976) 463.
60. S.M. Ohr: Phys. Stat. Sol. (a) 38 (1976) 553.
61. M. Wilkens and M. Rühle: Phys. Stat. Sol. (a) 49 (1972) 749.
62. T.Y. Tan and W.K. Tice: Phil. Mag. 34 (1976) 615.
63. W.J. Taylor, U. Gösele and T.Y. Tan: J. Appl. Phys. 72 (1992) 2192.
64. K.N. Neimark, B.A. Sakharov, V.F. Chulitsky and M.I. Osovsky: in Kremnii i Germanii 2 (Metallurgiya, Moscow, 1970) p. 32.
65. W. Wijaranakula and H.D. Chiou: Appl. Phys. Lett. 64 (1994) 1030.
66. J.B. Kamm and R. Müller: Sol. State Electr. 20 (1977) 105.
67. T. Abe, Y. Abe and J. Chikawa: in Semiconductor Silicon 1973 (Princeton, N.Y., Electrochem. Soc., 1973) p. 95.
68. D.J. Chadi: Phys. Rev. B 41 (1990) 10595.
69. P. Gall, J.P. Fillard, J. Bonnafe et al.: in Defect Control in Semicond., vol. 1 (Elsevier, Amsterdam, 1990) p. 255.
70. N.I. Puzanov and A.M. Eidenzon: Semicond. Sci. and Technol. 7 (1992) 406.
71. A. Ikari, H. Haga, A. Uedono et al.: Jpn. J. Appl. Phys. 33 (1994) 1723.
72. A. Borghesi, B. Pivac, A. Sassella and A. Stella: J. Appl. Phys. 38 (1995) 4169.
73. S. Umeno, Y. Yanase, M. Hourai et al.: Jpn. J. Appl. Phys. 38 (1999) 5725.
74. B.O. Kolbesen and A. Mühbaur: Sol. State Electr. 15 (1982) 759.
75. F. Shimura, R.S. Hockett and D.A. Reed: Appl. Phys. Lett. 46 (1985) 941.
76. P.J. Drevinsky, C.E. Caefer, L.C. Kimerling and J.L. Benton: in Defect Control in Semicond., vol. 1 (Elsevier, Amsterdam, 1990) p. 341.
77. S. Gupta, S. Messoloras, J.R. Schneider et al.: Semicond. Sci. and Technol. 7 (1992) 5.
78. T. Ueki, M. Itsumi and T. Takeda: Jpn. J. Appl. Phys. 38 (1999) 5695.
79. V.G. Gorshkov, Yu.K. Danilenko, V.V. Osiko et al.: Phys. Stat. Sol. (a) 106 (1988) 363.
80. W. Wijaranakula: J. Electrochem. Soc. 139 (1992) 604.
81. J.L. Lindström and B.G. Svensson: Mat. Res. Soc. Symp. Proc. 59 (1985) 45.
82. C.A. Londos, N. Sarlis, L.G. Fytros and K. Papasterqiou: Phys. Rev. B 53 (1996). 6900.
83. N.I. Puzanov and A.M. Eidenzon: Cryst. Rep. 41 (1996) 134.
84. T.Y. Tan amd C.Y. Kung: J. Appl. Phys. 59 (1986) 917.
85. U. Gösele: Mat. Res. Soc. Symp. Proc. 59 (1986) 419.
86. F.C. Frank and D. Turnbull: Phys. Rev. 104 (1956) 617.
87. H. Strunk, U. Gösele and B.O. Kolbesen: Appl. Phys. Lett. 34 (1979) 530.
88. U. Gösele, W. Frank and A. Seeger: J. Appl. Phys. 23 (1980) 361.
89. U. Gösele, F.F. Morehead and H. Föll: Semiconductor silicon (Electrochem. Soc., New York, 1981) 1991 766.
90. N.A. Stolwijk, J. Hölzl, W. Frank et al. Phys. Stat. Sol. (a) 104 (1987) 225.
91. H. Kitigawa: Jpn. J. Appl. Phys. 21 (1981) 276
92. T.Y. Tan, U. Gösele and F.F. Morehead: J. Appl. Phys. 31 (1983) 97.
93. R.H. Akchurin: in Fizika i materialovedenie poluprovodnikov s glubokimi urovnyami (Metallurgiya, Moscow, 1987) 117.
94. F.F. Morehead, N.A. Stolwijk, W. Meyberg and U. Gösele: Appl. Phys. Lett. 42 (1983) 690.
95. T. Okino and M. Onishi: Jpn. J. Appl. Phys. 33 (1994) 6642.
96. T. Okino, T. Shimosaki and R. Takaue: Jpn. J. Appl. Phys. 36 (1997) 6591.
97. K. Tempelhoff and N. Van Sung: Phys. Stat. Sol. (a) 72 (1983) 617.
98. R.B. Fair: J. Appl. Phys. 51 (1980) 5828.
99. D.A. Antoniadis and I. Moskowitz: J. Appl. Phys. 53 (1982) 6788.
100. U. Gösele, W. Frank and A. Seeger: Sol. State Commun. 45 (1983) 31.
101. A. Seeger and K.P. Chik: Phys. Stat. Sol. 29 (1968) 455.
102. A. Seeger and M. Swanson: in Lattice Defects in Semicond. (Univ. Tokyo Press, Tokyo, 1968) p 93.
103. A. Seeger: Rad. Eff. 9 (1971) 15.
104. W. Frank: in Lattice Defects in Semicond. (Wiley, London, 1975) 23.
105. A. Seeger, H. Föll and W. Frank: in Rad. Eff. in Semicond., Inst. Conf. Ser. N 43 (IOP, Bristol, 1977) p. 12.
106. A. Seeger, W. Frank and U. Gösele: in Defects and Rad. Eff. in Semicond., Inst. Conf. Ser. N 46 (IOP, Bristol, 1979) p. 148.
107. J. Dzelme, I. Ertsinsh, B. Zapol and A. Misiuk: Phys. Stat. Sol. (a) 171 (1999) 197.
108. R. Tognato: Phys. Stat. Sol. (a) 98 (1986) K133.
109. U. Gösele and T.Y. Tan: in Diffusion in Solids (TransTech Publ., Zürich, 1992) p. 189.
110. A.L. Aseev, L.I. Fedina, D. Höehl and H. Bartsch: Clusters of interstitial atoms in silicon and germanium (Academie Verlas, Berlin, 1994) 152 p.
111. P.S. Plekhanov, U. Gösele and T.Y. Tan: J. Appl. Phys. 84 (1998) 718.
112. L. Fedina, A. Gutakovskii, A. Aseev et al.: Phys. Stat. Sol. (a) 171 (1999) 147.
113. S. Pizzini: Phys. Stat. Sol. (a) 171 (1999) 123.
114. T.R. Waite: Phys. Rev. 107 (1957) 463.
115. L. Fedina, A. Gutakovskii, A. Aseev et al.: Phil. Mag. A 77 (1998) 423.
116. M. Ogino: Appl. Phys. Lett. 41 (1983) 847.
117. R.B. Swaroop: Sol. State Technol. 26 (1983) 111.
118. F. Shimura, R.S. Hockett, D.A. Reed and D.N. Wayne: Appl. Phys. Lett. 47 (1985) 794.
119. H. Yamanaka: Jpn. J. Appl. Phys. 33 (1994) 3319.
120. V.I. Talanin, I.E. Talanin and D.I. Levinson: in Abstr. of ICDC-01 (2001) p.27