Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 147-158

  Fedina, L ^a   Gutakovskii, A ^a   Aseev, A ^a   Van Landuyt, J ^b   Vanhellemont, J ^c,d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

^d SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRON IRRADIATION; HIGH RESOLUTION ELECTRON MICROSCOPY; POINT DEFECTS;

INTERMEDIATE DEFECT CONFIGURATIONS;

SEMICONDUCTING SILICON;

EID: 0032760330     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-396x(199901)171:1<147::aid-pssa147>3.0.co;2-u     Document Type: Article

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