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Volumn 33, Issue 18, 1998, Pages 4627-4632
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Growth parameters on the defects formation in a grown silicon crystal
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Author keywords
[No Author keywords available]
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Indexed keywords
COOLING;
CRYSTAL GROWTH FROM MELT;
ELECTRIC CONDUCTIVITY OF SOLIDS;
NUCLEATION;
OXIDATION;
PROBES;
SOLIDIFICATION;
STACKING FAULTS;
FOUR-POINT PROBE;
SILICON WAFERS;
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EID: 0032154299
PISSN: 00222461
EISSN: None
Source Type: Journal
DOI: 10.1023/A:1004489309683 Document Type: Article |
Times cited : (3)
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References (14)
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