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Semiconductor Science and Technology

Volumn 17, Issue 2, 2002, Pages 104-113

Physics of the formation of microdefects in dislocation-free monocrystals of float-zone silicon

(3) Talanin, V I a Talanin, I E a Levinson, D I a

a ZAPORIZHZHIA NATIONAL UNIVERSITY (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; HEAT TREATMENT; MATHEMATICAL MODELS; OPTICAL MICROSCOPY; SOLID STATE PHYSICS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

DISLOCATION FREE MONOCRYSTALS; FLOAT ZONE SILICON; INTERSTITIALS AGGLOMERATE; MICRODEFECTS; VACANCY MICRODEFECTS; X RAY TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0036471739 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/2/303 Document Type: Article

Times cited : (9)

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