The role of intrinsic point defects in the formation of oxygen precipitation centers in dislocation-free silicon

Crystallography Reports

Volumn 41, Issue 1, 1996, Pages 134-141

  Puzanov, N I ^a   Eidenzon, A M ^a  

^a Podol'skii Chem Metall Fact R   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030548190     PISSN: 10637745     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)

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