Modeling of nucleation and growth of voids in silicon

Journal of Applied Physics

Volumn 84, Issue 2, 1998, Pages 718-726

  Plekhanov, P S ^a   Gosele U M ^a   Tan, T Y ^a  

^a Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001002602     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368128     Document Type: Article

References (31)

1. H. Yamagishi, I. Fusegawa, N. Fujimaki, and M. Katayama, Proceedings of the Symposium on Advanced Science and Technology of Silicon Materials, Kona, HI, 25-29 November 1991 (unpublished), p. 83; also Semicond. Sci. Technol, 1, A135 (1992).
2. H. Yamagishi, I. Fusegawa, N. Fujimaki, and M. Katayama, Proceedings of the Symposium on Advanced Science and Technology of Silicon Materials, Kona, HI, 25-29 November 1991 (unpublished), p. 83; also Semicond. Sci. Technol, 1, A135 (1992).
3. J.-G. Park, Ph. D. thesis, North Carolina State University, 1994.
4. T. S. Plasket, Trans. Metall. Soc. AIME 233, 809 (1965).
5. T. Abe, T. Samizo, and M. Mayuyama, Jpn. J. Appl. Phys. 5, 458 (1966).
6. A. J. R. de Kock, Appl. Phys. Lett. 16, 100 (1970).
7. J.-G. Park, H. Kirk, K.-C. Cho, H.-K. Lee, C.-S. Lee, and G. A. Rozgonyi, in Semiconductor Silicon 1994, edited by H. R. Huff, W. Bergholz, and K. Sumino (Electrochemical Society, Pennington, NJ, 1994), p. 370.
8. M. Kato, Y. Ikida, and Y. Kitagawa, Jpn. J. Appl. Phys., Part 1 35, 5597 (1996).
9. T. Ueki, M. Istsumi, and T. Takeda, Proceedings of the 1996 International Conference on Solid State Devices and Materials, Yokohama, Japan, 1996 (unpublished), LA-1, 862.
10. H. Föll and B. O. Kolbesen, Appl. Phys. 8, 319 (1975).
11. P. M. Petroff and A. J. R. de Kock, J. Cryst. Growth 30, 117 (1975).
12. R. J. Roksnoer and M. M. B. Van den Boom, J. Cryst. Growth 53, 563 (1981).
13. H. Takeno, S. Ushio, and An T. Takenaka, in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by S. Ashok, J. Chevallier, K. Sumino, and E. Weber [Mater. Res. Soc. Symp. Proc. 262, 51 (1992)].
14. T. Y. Tan and U. Gösele, Appl. Phys. A: Solids Surf. 37, 1 (1985).
15. V. V. Voronkov, J. Cryst. Growth 59, 625 (1982).
16. T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Lett. 30, 175 (1977).
17. J. W. Christian, in The Theory of Tansformations in Metals and Alloys, 1st ed. (Pergamon, New York, 1965), Chap. X.
18. J. P. Hirth and J. Lothe, in Theory of Dislocations (McGraw-Hill, New York, 1968), p. 145.
19. R. J. Jaccodine, J. Electrochem. Soc. 111, 524 (1963).
20. In Ref. 17, p. 63, Chap. 8.
21. H. Föll, U. Gösele, and B. O. Kolbesen, J. Cryst. Growth 40, 90 (1977); J. Cryst. Growth 52, 907 (1981).
22. H. Föll, U. Gösele, and B. O. Kolbesen, J. Cryst. Growth 40, 90 (1977); J. Cryst. Growth 52, 907 (1981).
23. T. Ueki, M. Itsumi, and T. Takada, Appl. Phys. Lett. 70, 1248 (1997).
24. Ya. B. Zeldovich, Zh. Eksp. Teor. Fiz. 12, 525 (1942).
25. M. Hourai, T. Hagashima, E. Kajita, S. Miki, S. Sumita, M. Sano, and T. Shigematsu, in Semiconductor Silicon 1994, edited by H. R. Huff, W. Bergholz, and K. Sumino (Electrochemical Society, Pennington, NJ, 1994), p.370.
26. W. Jüngling, P. Pichler, S. Selberherr, E. Gurrero, and H. W. Pötzl, IEEE Trans. Electron Devices ED-32, 156 (1985).
27. T. Abe and H. Harada, in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett [Mater. Res. Soc. Symp. Proc. 14, 1 (1983)].
28. K. Tanahashi, N. Inoue, and Y. Muzokawa, Proceedings of the 2nd International Symposium on Advanced Science and Technology of Silicon Materials, Kona, HI, 25-29 November 1996 (unpublished), p. 51.
29. G. D. Watkins, J. Phys. Soc. Jpn. (Suppl. II) 18, 22 (1963); in Radiation Effects in Semiconductors (Dunod, Paris, 1964), p. 97.
30. G. D. Watkins, J. Phys. Soc. Jpn. (Suppl. II) 18, 22 (1963); in Radiation Effects in Semiconductors (Dunod, Paris, 1964), p. 97.
31. M. Tang, L. Colombo, J. Zhu, and T. Diaz de la Rubia, Phys. Rev. B 55, 14 279 (1997).