Structure of oxygen and silicon interstitials in silicon

Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 197-201

  Dzelme, J ^a   Ertsinsh, I ^a   Zapol, B ^a   Misiuk, A ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRONIC STRUCTURE; HIGH PRESSURE EFFECTS IN SOLIDS; MATHEMATICAL MODELS; OXYGEN; POINT DEFECTS; PRECIPITATION (CHEMICAL); TRANSPORT PROPERTIES;

AB INITIO SELF-CONSISTENT FIELD METHOD; EMBEDDED MOLECULAR CLUSTER MODEL;

SEMICONDUCTING SILICON;

EID: 0032755310     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199901)171:1<197::AID-PSSA197>3.0.CO;2-A     Document Type: Article

References (5)

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