The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon

Siberian Russian Student Workshops on Electron Devices and Materials, EDM 2000

Volumn , Issue , 2000, Pages 87-90

  Talanin, Vitaly I ^a  

^a ZAPORIZHZHIA NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELASTIC MODULI; ELECTRON DEVICES; ION IMPLANTATION; SILICON; THERMAL GRADIENTS;

AXIAL TEMPERATURE GRADIENTS; DISLOCATION-FREE MONOCRYSTALS; DISLOCATION-FREE SILICON; MECHANISM OF FORMATION; MICRO-DEFECTS;

MONOCRYSTALLINE SILICON;

EID: 84954139015     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SREDM.2000.888561     Document Type: Conference Paper

References (2)

1. De Kock A. J. R. Microdefects in dislocation-free silicon crystals. // Philips Res. Rep. - Suppl. 1, 1973. - P. 1-105.
2. Voronkov V.V. The mechanism of swirl defect formation in silicon. // J. Crystal Growth. - 1982. - 59, No 3. - P. 625-644.