Microdefects in an as-grown czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 1, 1998, Pages 241-246

  Iida, Satoshi ^a   Aoki, Yoshirou ^a   Okitsu, Kouhei ^a   Sugita, Yoshimitsu ^a   Kawata, Hiroshi ^b   Abe, Takao ^c  

^a UNIVERSITY OF TOYAMA   (Japan)

^b HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^c SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

CZ silicon; Microdefects; Simulation; Synchrotron radiation; X ray topograph

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; IMAGE ANALYSIS; STRAIN; SYNCHROTRON RADIATION; X RAY CRYSTALLOGRAPHY;

SYNCHROTRON RADIATION SECTION TOPOGRAPHY; TAKAGI-TAUPIN DYNAMICAL DIFFRACTION THEORY;

SILICON;

EID: 0031675887     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.241     Document Type: Article

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