Grown-in microdefects in a slowly grown Czochralski silicon crystal observed by synchrotron radiation topography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 11, 2000, Pages 6130-6135

  Iida, Satoshi ^a   Aoki, Yoshirou ^a   Sugita, Yoshimitsu ^a   Abe, Takao ^b   Kawata, Hiroshi ^c  

^a UNIVERSITY OF TOYAMA   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); SCANNING ELECTRON MICROSCOPY; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

MICRODEFECTS; X-RAY TOPOGRAPHY;

SEMICONDUCTING SILICON;

EID: 0034316893     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6130     Document Type: Article

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