Carbon in grown-in defects in Czochralski silicon and its influence on gate-oxide defects

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5695-5699

  Ueki, Takemi ^a   Itsumi, Manabu ^a   Takeda, Tadao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTRON ENERGY LOSS SPECTROSCOPY; GATES (TRANSISTOR); IMPURITIES;

GATE-OXIDE DEFECTS; OCTAHEDRAL VOID DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033357496     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5695     Document Type: Article

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