Dependence of grown-in defect behavior on oxygen concentration in Czochralski silicon crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 5725-5730

  Umeno, Shigeru ^a   Yanase, Yoshio ^a   Hourai, Masataka ^a   Sano, Masakazu ^a   Shida, Yoshiaki ^a   Tsuya, Hideki ^a  

^a Sumitomo Metal Industries Limited   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ETCHING; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR GROWTH; SUPERSATURATION;

GROWN-IN VOIDS; OPTICAL PRECIPITATE PROFILER; SECCO ETCHING;

SILICON WAFERS;

EID: 0033357499     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5725     Document Type: Article

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