Numerical simulation of point defect transport in floating-zone silicon single crystal growth

Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 300-304

  Larsen, T L ^a   Jensen, L ^a   Ludge A ^b   Riemann, H ^b   Lemke, H ^c  

^a Topsil Semiconductor Materials AS   (Denmark)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

A1. Computer simulation; A1. Point defects; A2. Floating zone technique; A2. Single crystal growth; B2. Semi conducting silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; MATHEMATICAL MODELS; POINT DEFECTS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

FLOATING ZONE TECHNIQUE; VACANCIES;

SEMICONDUCTING SILICON;

EID: 0035426743     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01320-3     Document Type: Conference Paper

References (7)