Self-interstitials in silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6591-6594

  Okino, Takahisa ^a   Shimosaki, Toshitada ^b   Takaue, Ryoichi ^b  

^a NIPPON BUNRI UNIVERSITY   (Japan)

^b KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Diffusion; Diffusivity; Oxidation stacking fault; Point defect; Point defect formation energy; Self interstitial; Semiconductor; Silicon

Indexed keywords

DIFFUSION IN SOLIDS; MATHEMATICAL MODELS; OXIDATION; POINT DEFECTS; STACKING FAULTS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

SELF INTERSTITIAL CONCENTRATION;

SEMICONDUCTING SILICON;

EID: 0031274452     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6591     Document Type: Article

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