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Volumn 77, Issue 2, 1998, Pages 423-435

On the mechanism of (111)-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope

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EID: 0040691370     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619808223762     Document Type: Article
Times cited : (33)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.