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Volumn 389, Issue 1-2, 2001, Pages 108-115

Phenomenological model of reactive r.f.-magnetron sputtering of Si in Ar/O2 atmosphere for the prediction of SiOx thin film stoichiometry from process parameters

(4) Seifarth, H a Schmidt, J U a Grotzschel R a Klimenkov, M a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

Metal oxide semiconductor structure (MOS); Nanostructures; Silicon; Sputtering

Indexed keywords

ANNEALING; ARGON; BINARY MIXTURES; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; OXYGEN; SILICA; STOICHIOMETRY; THIN FILMS;

REACTIVE RADIO FREQUENCY MAGNETRON SPUTTERING;

SEMICONDUCTING FILMS;

EID: 0035876075 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)00872-0 Document Type: Article

Times cited : (9)

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