Growth of Si nuclei on SiO2 for quantum dot memory applications

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 431-434

  Vizoso, J ^a   Martin F ^a   Martinez X ^a   Garriga, M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR STORAGE; SILICA; THERMAL EFFECTS;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033190154     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00420-7     Document Type: Article

References (6)

1. H.I. Hanafi, S. Tiwari and I. Khan, IEEE Trans. Elect. Dev., 43, 1553 (1996).
2. Y. Shi, K. Saito, H. Ishikuro and T. Hiramoto, J. Appl. Phys., 84, 2358 (1998).
3. I. Kim, H. Kim, J. Lee and H. Shin, Extended Abst. of the 1998 Int. Conf. Sol. Stat. Dev. Mat. (SSDM'98), Hiroshima (Japan), p. 170.
4. K.E. Violette, M.C. Öztürk, K.M. Christensen and D.M. Maher, J. Electrochem. Soc., 143, 649 (1996).
5. J.b. Rem, J. Holleman and J.F. Verweij, J. Electrochem. Soc., 144, 2101 (1997).
6. C. Basa, M. Tinani and E.A. Irene, J. Vac. Sci. Technol. A, 16, 2466 (1998).