Electron transport in nanocrystalline Si based single electron transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 B, 2000, Pages 4647-4650

  Dutta, Amit ^a   Oda, Shunri ^a   Fu, Ying ^b   Willander, Magnus ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

Coulomb blockade; Coulomb diamonds; Energy level quantization; Nanocrystalline silicon; Single electron transistors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC POTENTIAL; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; NANOSTRUCTURED MATERIALS; PLASMA DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

SINGLE ELECTRON TRANSISTORS;

TRANSISTORS;

EID: 0034227289     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.4647     Document Type: Article

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